Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

Yang Chai, Philip C.H. Chan, Yunyi Fu, Y. C. Chuang, C. Y. Liu

研究成果: 雜誌貢獻期刊論文同行評審

48 引文 斯高帕斯(Scopus)

摘要

The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106 A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.

原文???core.languages.en_GB???
頁(從 - 到)1001-1003
頁數3
期刊IEEE Electron Device Letters
29
發行號9
DOIs
出版狀態已出版 - 2008

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