Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

H. W. Tseng; C. T. Lu; Y. H. Hsiao; P. L. Liao; Y. C. Chuang; T. Y. Chung; C. Y. Liu

doi:10.1016/j.microrel.2010.05.002

Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

H. W. Tseng, C. T. Lu, Y. H. Hsiao, P. L. Liao, Y. C. Chuang, T. Y. Chung, C. Y. Liu

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

34 引文斯高帕斯（Scopus）

摘要

Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu₃Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.

原文	???core.languages.en_GB???
頁（從 - 到）	1159-1162
頁數	4
期刊	Microelectronics Reliability
卷	50
發行號	8
DOIs	https://doi.org/10.1016/j.microrel.2010.05.002
出版狀態	已出版 - 8月 2010

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10.1016/j.microrel.2010.05.002

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title = "Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces",

abstract = "Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.",

author = "Tseng, {H. W.} and Lu, {C. T.} and Hsiao, {Y. H.} and Liao, {P. L.} and Chuang, {Y. C.} and Chung, {T. Y.} and Liu, {C. Y.}",

note = "Funding Information: The authors would like to acknowledge the financial support of the National Science Council (NSC) and Advanced Semiconductor Engineering Inc. (ASE), Taiwan. ",

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AU - Tseng, H. W.

AU - Lu, C. T.

AU - Hsiao, Y. H.

AU - Liao, P. L.

AU - Chuang, Y. C.

AU - Chung, T. Y.

AU - Liu, C. Y.

N1 - Funding Information: The authors would like to acknowledge the financial support of the National Science Council (NSC) and Advanced Semiconductor Engineering Inc. (ASE), Taiwan.

PY - 2010/8

Y1 - 2010/8

N2 - Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.

AB - Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.

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M3 - 期刊論文

AN - SCOPUS:77955424443

SN - 0026-2714

VL - 50

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JF - Microelectronics Reliability

IS - 8

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Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

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