Electromigration failures at Cu/Sn joint interface

研究成果: 雜誌貢獻會議論文同行評審


Stressed by a high current density, several EM-induced reliability issues would likely occur at the flip-chip Cu/Sn joint interface. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces. Also, a rare EM failure at the anode interface was found and would be discussed in this study.

頁(從 - 到)32-35
期刊Proceedings - International Symposium on Advanced Packaging Materials
出版狀態已出版 - 2013
事件2013 IEEE 15th International Symposium and Exhibition on Advanced Packaging Materials, APM 2013 - Irvine, CA, United States
持續時間: 27 2月 20131 3月 2013


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