摘要
This paper presents the electrode separation method for the boundary condition of a-Si TFT mixed-level simulation. The Poisson equation and the continuity equation are formulated into equivalent circuits. So, a circuit simulator can be used to handle the two-dimensional numerical simulation of a-Si TFT. The boundary condition problem between a semiconductor and an external circuit is solved by the electrode separation method. An electrode is separated into two nodes to fit Kirchhoffs current law and the semiconductor equations, respectively. A simple a-Si TFT/LCD circuit is taken as an example for the electrode separation method. For mixed-level simulation this technique is very useful.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 123-130 |
頁數 | 8 |
期刊 | International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
卷 | 11 |
發行號 | 2 |
DOIs | |
出版狀態 | 已出版 - 1998 |