Electrode separation method to the boundary condition for a-Si TFT mixed-level simulation

Yao Tsung Tsai, Tien Chi Ke

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

This paper presents the electrode separation method for the boundary condition of a-Si TFT mixed-level simulation. The Poisson equation and the continuity equation are formulated into equivalent circuits. So, a circuit simulator can be used to handle the two-dimensional numerical simulation of a-Si TFT. The boundary condition problem between a semiconductor and an external circuit is solved by the electrode separation method. An electrode is separated into two nodes to fit Kirchhoffs current law and the semiconductor equations, respectively. A simple a-Si TFT/LCD circuit is taken as an example for the electrode separation method. For mixed-level simulation this technique is very useful.

原文???core.languages.en_GB???
頁(從 - 到)123-130
頁數8
期刊International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
11
發行號2
DOIs
出版狀態已出版 - 1998

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