Electrode dependence of filament formation in HfO2 resistive-switching memory

Kuan Liang Lin, Tuo Hung Hou, Jiann Shieh, Jun Hung Lin, Cheng Tung Chou, Yao Jen Lee

研究成果: 雜誌貢獻期刊論文同行評審

259 引文 斯高帕斯(Scopus)

摘要

This study investigates bipolar and nonpolar resistive-switching of HfO2 with various metal electrodes. Supported by convincing physical and electrical evidence, it is our contention that the composition of conducting filaments in HfO2 strongly depends upon the metal electrodes. Nonpolar resistive-switching with the Ni electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. Conversely, oxygen-deficient filaments induced by anion migration are responsible for bipolar resistive-switching. It was also found that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching power, cycling variations, and retention at elevated temperatures.

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文章編號084104
期刊Journal of Applied Physics
109
發行號8
DOIs
出版狀態已出版 - 15 4月 2011

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