Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Ş Kalem, J. Chyi, C. W. Litton, H. Morkoç, S. C. Kan, A. Yariv

研究成果: 雜誌貢獻期刊論文同行評審

26 引文 斯高帕斯(Scopus)

摘要

InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm -3) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.

原文???core.languages.en_GB???
頁(從 - 到)562-564
頁數3
期刊Applied Physics Letters
53
發行號7
DOIs
出版狀態已出版 - 1988

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