Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Ş Kalem; J. Chyi; C. W. Litton; H. Morkoç; S. C. Kan; A. Yariv

doi:10.1063/1.99857

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Ş Kalem, J. Chyi, C. W. Litton, H. Morkoç, S. C. Kan, A. Yariv

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研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

26 引文斯高帕斯（Scopus）

摘要

InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×10⁴ cm²/(V s) in 6.7-μm-thick (n=2.6×10¹⁵ cm ^-3) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.

原文	???core.languages.en_GB???
頁（從 - 到）	562-564
頁數	3
期刊	Applied Physics Letters
卷	53
發行號	7
DOIs	https://doi.org/10.1063/1.99857
出版狀態	已出版 - 1988

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10.1063/1.99857

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@article{e753d1a3eda04342af84b96cbb5abb9c,

title = "Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates",

abstract = "InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm -3) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.",

author = "{\c S} Kalem and J. Chyi and Litton, {C. W.} and H. Morko{\c c} and Kan, {S. C.} and A. Yariv",

year = "1988",

doi = "10.1063/1.99857",

language = "???core.languages.en_GB???",

volume = "53",

pages = "562--564",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "7",

}

TY - JOUR

T1 - Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

AU - Kalem, Ş

AU - Chyi, J.

AU - Litton, C. W.

AU - Morkoç, H.

AU - Kan, S. C.

AU - Yariv, A.

PY - 1988

Y1 - 1988

N2 - InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm -3) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.

AB - InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm -3) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.

UR - http://www.scopus.com/inward/record.url?scp=0345793945&partnerID=8YFLogxK

U2 - 10.1063/1.99857

DO - 10.1063/1.99857

M3 - 期刊論文

AN - SCOPUS:0345793945

VL - 53

SP - 562

EP - 564

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

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