Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template

Cheng Yu Chen, Li Han Siao, Jen Inn Chyi, Chih Kang Chao, Chih Hung Wu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Indium doped ZnO films have been successfully deposited on high resistivity GaN(0001) templates by plasma-assisted molecular beam epitaxy. N-type ZnO with carrier concentration of 4.35x1020 cm-3 and electron mobility of 5.7 cm/V-s, leading to resistivity of 2.6x10-3 -cm, are measured by Hall measurements. Under low indium doping flux, the carrier concentration increases accordingly with indium cell temperature until a max concentration is achieved as it might reach the In solubility. Further increase in doping flux leads to lower carrier concentration. X-ray diffraction spectra also show the degraded crystal quality as In doping concentration increases. Low temperature photoluminescence indicates that donor bound excitons dominate the emission while deep level emissions are not present in our In-doped ZnO films.

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主出版物標題Gallium Nitride Materials and Devices VI
DOIs
出版狀態已出版 - 2011
事件Gallium Nitride Materials and Devices VI - San Francisco, CA, United States
持續時間: 24 1月 201127 1月 2011

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7939
ISSN(列印)0277-786X

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???event.eventtypes.event.conference???Gallium Nitride Materials and Devices VI
國家/地區United States
城市San Francisco, CA
期間24/01/1127/01/11

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