Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chou, C. M. Lee

研究成果: 雜誌貢獻期刊論文同行評審

摘要

GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.

原文???core.languages.en_GB???
文章編號3
頁(從 - 到)147-155
頁數9
期刊Journal of Electronic Materials
30
發行號3
DOIs
出版狀態已出版 - 3月 2001

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