@article{aaffeaab7b4849ebb478a6aa76baaad5,
title = "Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures",
abstract = "GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.",
keywords = "C-V measurements, DLTS, Deep centers, GaN, I-V measurements, P-i-n rectifiers",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Zhang, {A. P.} and F. Ren and Pearton, {S. J.} and Chyi, {J. I.} and Nee, {T. E.} and Chou, {C. C.} and Lee, {C. M.}",
note = "Funding Information: The work at IRM is partially supported by the U.S. Civilian R&D Foundation and the Russian Foundation for Fundamental Research. The work at NCU is partially supported by the National Science Council of ROC. The work at UF is partially supported by ONR (J.C. Zolper), DARPA/EPRI (monitored by ONR) and by NSF (L. Hess).",
year = "2001",
month = mar,
doi = "10.1007/s11664-001-0008-0",
language = "???core.languages.en_GB???",
volume = "30",
pages = "147--155",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "3",
}