GaAS0.5Sb0.5 grown on InP by molecular beam epitaxy (MBE) has been characterized by transmission electron microscopy and variable temperature Hall measurements. Unintentionally doped layers are p-type with measured hole concentrations of 1-3 x 1016 cm-3 at 300K. The behavior of the Hall coefficient as a function of temperature is found to be well-described in the temperature range 30K<T<300K by a two-acceptor model. Intentional Si doping of the GaAS0.5Sb0.5 layers leads to relatively uncompensated p-type conductivity. Hole mobilities in these Iayers are generally less than 100 cm /Vs at 300K as a result of compositional fluctuations which result from the metastable nature of these films. In addition, hole mobilities are anisotropic and reflect an unusual asymmetry in the film microstructure which can be observed by transmission electron microscopy.
|頁（從 - 到）||35-40|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已出版 - 18 5月 1988|