Electrical characteristics of mbe-grown gaas1-x sbx on inp and correlation with film microstructure

J. Klem; J. I. Chyi; H. Morkoc; Y. E. Ihm; N. Otsuka

doi:10.1117/12.943937

Electrical characteristics of mbe-grown gaas_1-x sb_x on inp and correlation with film microstructure

J. Klem, J. I. Chyi, H. Morkoc, Y. E. Ihm, N. Otsuka

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

GaAS_0.5Sb_0.5 grown on InP by molecular beam epitaxy (MBE) has been characterized by transmission electron microscopy and variable temperature Hall measurements. Unintentionally doped layers are p-type with measured hole concentrations of 1-3 x 10¹⁶ cm^-3 at 300K. The behavior of the Hall coefficient as a function of temperature is found to be well-described in the temperature range 30K<T<300K by a two-acceptor model. Intentional Si doping of the GaAS_0.5Sb_0.5 layers leads to relatively uncompensated p-type conductivity. Hole mobilities in these Iayers are generally less than 100 cm /Vs at 300K as a result of compositional fluctuations which result from the metastable nature of these films. In addition, hole mobilities are anisotropic and reflect an unusual asymmetry in the film microstructure which can be observed by transmission electron microscopy.

原文	???core.languages.en_GB???
頁（從 - 到）	35-40
頁數	6
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	877
DOIs	https://doi.org/10.1117/12.943937
出版狀態	已出版 - 18 5月 1988

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10.1117/12.943937

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title = "Electrical characteristics of mbe-grown gaas1-x sbx on inp and correlation with film microstructure",

abstract = "GaAS0.5Sb0.5 grown on InP by molecular beam epitaxy (MBE) has been characterized by transmission electron microscopy and variable temperature Hall measurements. Unintentionally doped layers are p-type with measured hole concentrations of 1-3 x 1016 cm-3 at 300K. The behavior of the Hall coefficient as a function of temperature is found to be well-described in the temperature range 30K<T<300K by a two-acceptor model. Intentional Si doping of the GaAS0.5Sb0.5 layers leads to relatively uncompensated p-type conductivity. Hole mobilities in these Iayers are generally less than 100 cm /Vs at 300K as a result of compositional fluctuations which result from the metastable nature of these films. In addition, hole mobilities are anisotropic and reflect an unusual asymmetry in the film microstructure which can be observed by transmission electron microscopy.",

author = "J. Klem and Chyi, {J. I.} and H. Morkoc and Ihm, {Y. E.} and N. Otsuka",

note = "Funding Information: This work was supported by SDIO/IST through ONR at the University of Illinois, by the NSF-MRL program at Purdue, and by the Department of Energy Contract Number DE-AC04-76DP00789 at Sandia National Laboratories.",

year = "1988",

month = may,

day = "18",

doi = "10.1117/12.943937",

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T1 - Electrical characteristics of mbe-grown gaas1-x sbx on inp and correlation with film microstructure

AU - Klem, J.

AU - Chyi, J. I.

AU - Morkoc, H.

AU - Ihm, Y. E.

AU - Otsuka, N.

N1 - Funding Information: This work was supported by SDIO/IST through ONR at the University of Illinois, by the NSF-MRL program at Purdue, and by the Department of Energy Contract Number DE-AC04-76DP00789 at Sandia National Laboratories.

PY - 1988/5/18

Y1 - 1988/5/18

N2 - GaAS0.5Sb0.5 grown on InP by molecular beam epitaxy (MBE) has been characterized by transmission electron microscopy and variable temperature Hall measurements. Unintentionally doped layers are p-type with measured hole concentrations of 1-3 x 1016 cm-3 at 300K. The behavior of the Hall coefficient as a function of temperature is found to be well-described in the temperature range 30K<T<300K by a two-acceptor model. Intentional Si doping of the GaAS0.5Sb0.5 layers leads to relatively uncompensated p-type conductivity. Hole mobilities in these Iayers are generally less than 100 cm /Vs at 300K as a result of compositional fluctuations which result from the metastable nature of these films. In addition, hole mobilities are anisotropic and reflect an unusual asymmetry in the film microstructure which can be observed by transmission electron microscopy.

AB - GaAS0.5Sb0.5 grown on InP by molecular beam epitaxy (MBE) has been characterized by transmission electron microscopy and variable temperature Hall measurements. Unintentionally doped layers are p-type with measured hole concentrations of 1-3 x 1016 cm-3 at 300K. The behavior of the Hall coefficient as a function of temperature is found to be well-described in the temperature range 30K<T<300K by a two-acceptor model. Intentional Si doping of the GaAS0.5Sb0.5 layers leads to relatively uncompensated p-type conductivity. Hole mobilities in these Iayers are generally less than 100 cm /Vs at 300K as a result of compositional fluctuations which result from the metastable nature of these films. In addition, hole mobilities are anisotropic and reflect an unusual asymmetry in the film microstructure which can be observed by transmission electron microscopy.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -

Electrical characteristics of mbe-grown gaas1-x sbx on inp and correlation with film microstructure

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Electrical characteristics of mbe-grown gaas_1-x sb_x on inp and correlation with film microstructure