摘要
The GaN homo-junction light-emitting diodes (LEDs) with multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 angstroms thick GaN nucleation layer grown at a low temperature of 525 °C and a 4 μm thick GaN epitaxial layer grown at a high temperature of 1025 °C. As compared to the conventional growth without buffer layer, the GaN LEDs with MBL will exhibit a low turn-on voltage, stronger electroluminescence intensity, and higher light output power. It is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1483-1486 |
頁數 | 4 |
期刊 | Solid-State Electronics |
卷 | 44 |
發行號 | 8 |
DOIs | |
出版狀態 | 已出版 - 1 8月 2000 |