Electrical and Optical Characteristics of GaAs0.6P0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method

J. C. Lou, M. S. Lin, J. I. Chyi, M. D. Lin, S. Sche

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

Zinc doped GaAs0.6P0.4 LEDs are fabricated by semi‐closed diffusion method to achieve the junction depth of 3.3 μm in the temperature range from 600 to 800 °C. Optical and electrical characteristics evaluation indicate that the degradation of red light emission in GaAs0.6P0.4 LEDs is mainly due to deep trapping levels. DLTS results also show that the Ev + 0.64 eV hole trap plays the major role in forming the radiative efficiency degradation of the red light emission in GaAs0.6P0.4 LEDs.

原文???core.languages.en_GB???
頁(從 - 到)741-747
頁數7
期刊Physica Status Solidi (A) Applied Research
77
發行號2
DOIs
出版狀態已出版 - 16 6月 1983

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