Electrical and Optical Characteristics of GaAs0.6P0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method

J. C. Lou; M. S. Lin; J. I. Chyi; M. D. Lin; S. Sche

doi:10.1002/pssa.2210770242

Electrical and Optical Characteristics of GaAs_0.6P_0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method

J. C. Lou, M. S. Lin, J. I. Chyi, M. D. Lin, S. Sche

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Zinc doped GaAs_0.6P_0.4 LEDs are fabricated by semi‐closed diffusion method to achieve the junction depth of 3.3 μm in the temperature range from 600 to 800 °C. Optical and electrical characteristics evaluation indicate that the degradation of red light emission in GaAs_0.6P_0.4 LEDs is mainly due to deep trapping levels. DLTS results also show that the E_v + 0.64 eV hole trap plays the major role in forming the radiative efficiency degradation of the red light emission in GaAs_0.6P_0.4 LEDs.

原文	???core.languages.en_GB???
頁（從 - 到）	741-747
頁數	7
期刊	Physica Status Solidi (A) Applied Research
卷	77
發行號	2
DOIs	https://doi.org/10.1002/pssa.2210770242
出版狀態	已出版 - 16 6月 1983

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10.1002/pssa.2210770242

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title = "Electrical and Optical Characteristics of GaAs0.6P0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method",

abstract = "Zinc doped GaAs0.6P0.4 LEDs are fabricated by semi‐closed diffusion method to achieve the junction depth of 3.3 μm in the temperature range from 600 to 800 °C. Optical and electrical characteristics evaluation indicate that the degradation of red light emission in GaAs0.6P0.4 LEDs is mainly due to deep trapping levels. DLTS results also show that the Ev + 0.64 eV hole trap plays the major role in forming the radiative efficiency degradation of the red light emission in GaAs0.6P0.4 LEDs.",

author = "Lou, {J. C.} and Lin, {M. S.} and Chyi, {J. I.} and Lin, {M. D.} and S. Sche",

year = "1983",

month = jun,

day = "16",

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T1 - Electrical and Optical Characteristics of GaAs0.6P0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method

AU - Lou, J. C.

AU - Lin, M. S.

AU - Chyi, J. I.

AU - Lin, M. D.

AU - Sche, S.

PY - 1983/6/16

Y1 - 1983/6/16

N2 - Zinc doped GaAs0.6P0.4 LEDs are fabricated by semi‐closed diffusion method to achieve the junction depth of 3.3 μm in the temperature range from 600 to 800 °C. Optical and electrical characteristics evaluation indicate that the degradation of red light emission in GaAs0.6P0.4 LEDs is mainly due to deep trapping levels. DLTS results also show that the Ev + 0.64 eV hole trap plays the major role in forming the radiative efficiency degradation of the red light emission in GaAs0.6P0.4 LEDs.

AB - Zinc doped GaAs0.6P0.4 LEDs are fabricated by semi‐closed diffusion method to achieve the junction depth of 3.3 μm in the temperature range from 600 to 800 °C. Optical and electrical characteristics evaluation indicate that the degradation of red light emission in GaAs0.6P0.4 LEDs is mainly due to deep trapping levels. DLTS results also show that the Ev + 0.64 eV hole trap plays the major role in forming the radiative efficiency degradation of the red light emission in GaAs0.6P0.4 LEDs.

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U2 - 10.1002/pssa.2210770242

DO - 10.1002/pssa.2210770242

M3 - 期刊論文

AN - SCOPUS:0020764724

VL - 77

SP - 741

EP - 747

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 2

ER -

Electrical and Optical Characteristics of GaAs0.6P0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method

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Electrical and Optical Characteristics of GaAs_0.6P_0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method