Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, F. Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 1016 cm-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.

原文???core.languages.en_GB???
頁(從 - 到)963-968
頁數6
期刊Solid-State Electronics
47
發行號6
DOIs
出版狀態已出版 - 6月 2003

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