Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

W. M. Chen; I. A. Buyanova; K. Nishibayashi; K. Kayanuma; K. Seo; A. Murayama; Y. Oka; G. Thaler; R. Frazier; C. R. Abernathy; F. Ren; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi

doi:10.1063/1.2125125

Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

W. M. Chen, I. A. Buyanova, K. Nishibayashi, K. Kayanuma, K. Seo, A. Murayama, Y. Oka, G. Thaler, R. Frazier, C. R. Abernathy, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

20 引文斯高帕斯（Scopus）

摘要

Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors.

原文	???core.languages.en_GB???
文章編號	192107
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	87
發行號	19
DOIs	https://doi.org/10.1063/1.2125125
出版狀態	已出版 - 7 11月 2005

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10.1063/1.2125125

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Chen, W. M., Buyanova, I. A., Nishibayashi, K., Kayanuma, K., Seo, K., Murayama, A., Oka, Y., Thaler, G., Frazier, R., Abernathy, C. R., Ren, F., Pearton, S. J., Pan, C. C., Chen, G. T., & Chyi, J. I. (2005). Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection. Applied Physics Letters, 87(19), 1-3. 文章 192107. https://doi.org/10.1063/1.2125125

@article{dda93ef8dd7549aa9f749132e02f6e99,

title = "Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection",

abstract = "Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors.",

author = "Chen, {W. M.} and Buyanova, {I. A.} and K. Nishibayashi and K. Kayanuma and K. Seo and A. Murayama and Y. Oka and G. Thaler and R. Frazier and Abernathy, {C. R.} and F. Ren and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.}",

note = "Funding Information: Financial support by VR and STINT is greatly appreciated. The work at UF is supported by AFOSR, ARO, and NSF. ",

year = "2005",

month = nov,

day = "7",

doi = "10.1063/1.2125125",

language = "???core.languages.en_GB???",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "19",

}

Chen, WM, Buyanova, IA, Nishibayashi, K, Kayanuma, K, Seo, K, Murayama, A, Oka, Y, Thaler, G, Frazier, R, Abernathy, CR, Ren, F, Pearton, SJ, Pan, CC, Chen, GT & Chyi, JI 2005, 'Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection', Applied Physics Letters, 卷 87, 編號 19, 192107, 頁 1-3. https://doi.org/10.1063/1.2125125

TY - JOUR

T1 - Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells

T2 - An obstacle to spin detection

AU - Chen, W. M.

AU - Buyanova, I. A.

AU - Nishibayashi, K.

AU - Kayanuma, K.

AU - Seo, K.

AU - Murayama, A.

AU - Oka, Y.

AU - Thaler, G.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Ren, F.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

N1 - Funding Information: Financial support by VR and STINT is greatly appreciated. The work at UF is supported by AFOSR, ARO, and NSF.

PY - 2005/11/7

Y1 - 2005/11/7

N2 - Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors.

AB - Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors.

UR - http://www.scopus.com/inward/record.url?scp=27644496755&partnerID=8YFLogxK

U2 - 10.1063/1.2125125

DO - 10.1063/1.2125125

M3 - 期刊論文

AN - SCOPUS:27644496755

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192107

ER -

Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

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