Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

W. M. Chen, I. A. Buyanova, K. Nishibayashi, K. Kayanuma, K. Seo, A. Murayama, Y. Oka, G. Thaler, R. Frazier, C. R. Abernathy, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors.

原文???core.languages.en_GB???
文章編號192107
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號19
DOIs
出版狀態已出版 - 7 11月 2005

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