Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Pao Hsun Huang; Sih An Chen; Li Wei Chao; Jia Xun Xie; Ching Yu Liao; Zong Liang Tseng; Sheng Hui Chen

doi:10.3390/ma16176060

Efficient CsPbBr₃ Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Pao Hsun Huang, Sih An Chen, Li Wei Chao, Jia Xun Xie, Ching Yu Liao, Zong Liang Tseng, Sheng Hui Chen

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr₃ QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m² and an external quantum efficiency (EQE) up to 3.63%.

原文	???core.languages.en_GB???
文章編號	6060
期刊	Materials
卷	16
發行號	17
DOIs	https://doi.org/10.3390/ma16176060
出版狀態	已出版 - 9月 2023

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10.3390/ma16176060

引用此

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abstract = "Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices{\textquoteright} performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.",

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AU - Huang, Pao Hsun

AU - Chen, Sih An

AU - Chao, Li Wei

AU - Xie, Jia Xun

AU - Liao, Ching Yu

AU - Tseng, Zong Liang

AU - Chen, Sheng Hui

PY - 2023/9

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N2 - Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.

AB - Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.

KW - CsPbBr quantum dot

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KW - light-emitting diode

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Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

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引用此

Efficient CsPbBr₃ Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers