Efficiency improvement of GaN light emitting diodes on Si by double island growth method

Hsueh Hsing Liu; Lung Chieh Cheng; Nien Tze Yeh; Chen Zi Liao; Jen Inn Chyi

doi:10.1109/CLEOPR.2013.6600221

Efficiency improvement of GaN light emitting diodes on Si by double island growth method

Hsueh Hsing Liu, Lung Chieh Cheng, Nien Tze Yeh, Chen Zi Liao, Jen Inn Chyi

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×10⁹ cm^-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.

原文	???core.languages.en_GB???
主出版物標題	2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs	https://doi.org/10.1109/CLEOPR.2013.6600221
出版狀態	已出版 - 2013
事件	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan 持續時間: 30 6月 2013 → 4 7月 2013

出版系列

名字	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
國家/地區	Japan
城市	Kyoto
期間	30/06/13 → 4/07/13

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10.1109/CLEOPR.2013.6600221

引用此

Liu, H. H., Cheng, L. C., Yeh, N. T., Liao, C. Z., & Chyi, J. I. (2013). Efficiency improvement of GaN light emitting diodes on Si by double island growth method. 於 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 文章 6600221 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600221

@inproceedings{4c2f581a380d4366a1bf2ee9dd8703fd,

title = "Efficiency improvement of GaN light emitting diodes on Si by double island growth method",

abstract = "This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×109 cm-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.",

author = "Liu, {Hsueh Hsing} and Cheng, {Lung Chieh} and Yeh, {Nien Tze} and Liao, {Chen Zi} and Chyi, {Jen Inn}",

year = "2013",

doi = "10.1109/CLEOPR.2013.6600221",

language = "???core.languages.en_GB???",

isbn = "9781467364751",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013",

note = "10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 ; Conference date: 30-06-2013 Through 04-07-2013",

}

Liu, HH, Cheng, LC, Yeh, NT, Liao, CZ & Chyi, JI 2013, Efficiency improvement of GaN light emitting diodes on Si by double island growth method. 於 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013., 6600221, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013, Kyoto, Japan, 30/06/13. https://doi.org/10.1109/CLEOPR.2013.6600221

Efficiency improvement of GaN light emitting diodes on Si by double island growth method. / Liu, Hsueh Hsing; Cheng, Lung Chieh; Yeh, Nien Tze 等.
2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013. 2013. 6600221 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Efficiency improvement of GaN light emitting diodes on Si by double island growth method

AU - Liu, Hsueh Hsing

AU - Cheng, Lung Chieh

AU - Yeh, Nien Tze

AU - Liao, Chen Zi

AU - Chyi, Jen Inn

PY - 2013

Y1 - 2013

N2 - This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×109 cm-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.

AB - This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×109 cm-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.

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U2 - 10.1109/CLEOPR.2013.6600221

DO - 10.1109/CLEOPR.2013.6600221

M3 - 會議論文篇章

AN - SCOPUS:84885442895

SN - 9781467364751

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

T2 - 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

Y2 - 30 June 2013 through 4 July 2013

ER -

Efficiency improvement of GaN light emitting diodes on Si by double island growth method

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