TY - JOUR
T1 - Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays
AU - Lin, G. J.
AU - Lai, K. Y.
AU - Lin, C. A.
AU - Lai, Y. L.
AU - He, J. H.
N1 - Funding Information:
Manuscript received May 12, 2011; accepted May 21, 2011. Date of publication June 27, 2011; date of current version July 27, 2011. This work was supported by Taiwan National Science Council under Grant NSC 99-2112-M-002-024-MY3. The review of this letter was arranged by Editor P. K.-L. Yu. G. J. Lin, K. Y. Lai, C. A. Lin, and J. H. He are with the Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (e-mail: [email protected]). Y.-L. Lai is with Genesis Photonics Inc., Tainan 74144, Taiwan. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2011.2158061
PY - 2011/8
Y1 - 2011/8
N2 - Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.
AB - Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.
KW - Antireflection (AR)
KW - InGaN
KW - ZnO nanorod arrays (NRAs)
KW - conversion efficiency
KW - multiple quantum well (MQW)
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=79960918609&partnerID=8YFLogxK
U2 - 10.1109/LED.2011.2158061
DO - 10.1109/LED.2011.2158061
M3 - 期刊論文
AN - SCOPUS:79960918609
SN - 0741-3106
VL - 32
SP - 1104
EP - 1106
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 8
M1 - 5930323
ER -