Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

G. J. Lin, K. Y. Lai, C. A. Lin, Y. L. Lai, J. H. He

研究成果: 雜誌貢獻期刊論文同行評審

27 引文 斯高帕斯(Scopus)

摘要

Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.

原文???core.languages.en_GB???
文章編號5930323
頁(從 - 到)1104-1106
頁數3
期刊IEEE Electron Device Letters
32
發行號8
DOIs
出版狀態已出版 - 8月 2011

指紋

深入研究「Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays」主題。共同形成了獨特的指紋。

引用此