Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

Yu An Liao; Wei Ting Hsu; Pei Chin Chiu; Jen Inn Chyi; Wen Hao Chang

doi:10.1063/1.3062979

Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

Yu An Liao, Wei Ting Hsu, Pei Chin Chiu, Jen Inn Chyi, Wen Hao Chang

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

43 引文斯高帕斯（Scopus）

摘要

We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-x Sbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.

原文	???core.languages.en_GB???
文章編號	053101
期刊	Applied Physics Letters
卷	94
發行號	5
DOIs	https://doi.org/10.1063/1.3062979
出版狀態	已出版 - 2009

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title = "Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots",

abstract = "We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-x Sbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.",

author = "Liao, {Yu An} and Hsu, {Wei Ting} and Chiu, {Pei Chin} and Chyi, {Jen Inn} and Chang, {Wen Hao}",

note = "Funding Information: This work was supported in part by the project of MOE-ATU and the National Science Council of Taiwan under Grant No. NSC 97-2112-M-009-015-MY2. ",

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AU - Liao, Yu An

AU - Hsu, Wei Ting

AU - Chiu, Pei Chin

AU - Chyi, Jen Inn

AU - Chang, Wen Hao

N1 - Funding Information: This work was supported in part by the project of MOE-ATU and the National Science Council of Taiwan under Grant No. NSC 97-2112-M-009-015-MY2.

PY - 2009

Y1 - 2009

N2 - We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-x Sbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.

AB - We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-x Sbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.

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Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

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