In this study, the installation of insulation blocks in the hot zone is utilized to assist in the growth of multi-crystalline silicon ingots with 800 kg of silicon charge using the seeded directional solidification method. A transient global numerical simulation is carried out to investigate the heat and mass transport during growth process. At a higher solidification fraction, lower concavity of the crystal–melt interface near the crucible wall can be obtained as compared to the standard model. The lowest concavity and highest energy saving is achieved when insulation blocks are added to the side of a directional solidification block and to the low part of the side insulation. The simulation results for this design also show a reduction of the melt velocity. The average oxygen concentration is slightly higher along the crystal–melt interface, compared to the standard one.
|頁（從 - 到）||27-34|
|期刊||Journal of Crystal Growth|
|出版狀態||已出版 - 15 10月 2016|