Effects of stress on the interfacial reactions of metal thin films on (0 0 1)Si

The influences of stress on the interfacial reactions of Ti and Ni metal thin films on (0 0 1)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to enhance the formation of Ti and Ni silicides. For Ti and Ni on stressed (0 0 1)Si substrates after rapid thermal annealing, the thicknesses of TiSi₂ and NiSi films were found to decrease and increase with the compressive and tensile stress level, respectively. The results clearly indicated that the compressive stress hinders the interdiffusion of atoms through the metal/Si interface, so that the formation of metal silicide films was retarded. In contrast, tensile stress facilitates the interdiffusion of atoms. As a result, the growth of Ti and Ni silicide is promoted.