Effects of stress on formation of silicides on silicon-on-insulator wafers

C. H. Liu, S. C. Liew, S. L. Cheng, L. J. Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

Effects of stress on the formation of titanium and nickel silicides on silicon-on-insulator (SOI) wafers have been investigated by sheet resistance measurements, glancing-angle x-ray diffraction analysis and transmission electron microscopy. Tensile stress was induced by the difference of thermal expansion coefficients of Si and SiO2. The thinner the top silicon layer, the higher tensile stress was induced. The formation of both Ti and Ni silicides was found to be enhanced by the tensile stress. The results indicated that the tensile stress promotes the atomic diffusion at the interface to facilitate the formation of metal silicides.

原文???core.languages.en_GB???
主出版物標題2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
編輯Hiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
發行者Institute of Electrical and Electronics Engineers Inc.
頁面477-482
頁數6
ISBN(電子)0780365208, 9780780365209
DOIs
出版狀態已出版 - 2001
事件6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
持續時間: 22 10月 200125 10月 2001

出版系列

名字2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
1

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???event.eventtypes.event.conference???6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
國家/地區China
城市Shanghai
期間22/10/0125/10/01

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