Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

Nien Tze Yeh; Wei Shen Liu; Shu Han Chen; Jen Inn Chyi

Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

Nien Tze Yeh, Wei Shen Liu, Shu Han Chen, Jen Inn Chyi

電機工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

It is found that the performance of self-assembled In_0.5Ga_0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

原文	???core.languages.en_GB???
頁（從 - 到）	J3.21.1-J3.21.6
期刊	Materials Research Society Symposium - Proceedings
卷	642
出版狀態	已出版 - 2001
事件	Semiconductor Quantum Dots II - Boston, MA, United States 持續時間: 27 11月 2000 → 30 11月 2000

引用此

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title = "Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers",

abstract = "It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.",

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T1 - Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

AU - Yeh, Nien Tze

AU - Liu, Wei Shen

AU - Chen, Shu Han

AU - Chyi, Jen Inn

PY - 2001

Y1 - 2001

N2 - It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

AB - It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

UR - http://www.scopus.com/inward/record.url?scp=19244377062&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:19244377062

SN - 0272-9172

VL - 642

SP - J3.21.1-J3.21.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Semiconductor Quantum Dots II

Y2 - 27 November 2000 through 30 November 2000

ER -

Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

摘要

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