Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

M. N. Chang; K. C. Hsieh; T. E. Nee; J. I. Chyi

doi:10.1063/1.371073

Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

M. N. Chang
, K. C. Hsieh
, T. E. Nee
, J. I. Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

原文	???core.languages.en_GB???
頁（從 - 到）	2442-2447
頁數	6
期刊	Journal of Applied Physics
卷	86
發行號	5
DOIs	https://doi.org/10.1063/1.371073
出版狀態	已出版 - 9月 1999

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10.1063/1.371073

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title = "Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides",

abstract = "Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.",

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AU - Chang, M. N.

AU - Hsieh, K. C.

AU - Nee, T. E.

AU - Chyi, J. I.

PY - 1999/9

Y1 - 1999/9

N2 - Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

AB - Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

UR - https://www.scopus.com/pages/publications/0032620395

U2 - 10.1063/1.371073

DO - 10.1063/1.371073

M3 - 期刊論文

AN - SCOPUS:0032620395

SN - 0021-8979

VL - 86

SP - 2442

EP - 2447

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

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