Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

M. N. Chang, K. C. Hsieh, T. E. Nee, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

原文???core.languages.en_GB???
頁(從 - 到)2442-2447
頁數6
期刊Journal of Applied Physics
86
發行號5
DOIs
出版狀態已出版 - 9月 1999

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