摘要
Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 2442-2447 |
頁數 | 6 |
期刊 | Journal of Applied Physics |
卷 | 86 |
發行號 | 5 |
DOIs | |
出版狀態 | 已出版 - 9月 1999 |