Effects of parasitic MOSFETs and traps on charge transport properties of germanium quantum dot single electron/hole transistors

W. T. Lai, W. M. Liao, M. T.David Kuo, P. W. Li

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Ge quantum-dot (QD) single electron and single hole transistors (SETs/SHTs) have be experimentally fabricated with Ge QDs formed by selective oxidation of Si0.95Ge0.05/Si-on-insulator nanowires. The turn-on voltages of Ge QD SETs/SHTs could be modulated by adjusting the top Si layer thickness or applying back gate biases due to parasitic MOSFETs effect. In addition to quantum confinement and coulomb charging effects, drain current hysteresis memory effects have also been observed both in SETs and SHTs at room temperature. The charge storage in the Ge QD SET and SHT might be attributed to the traps at the internal/surface of Ge QDs and the interface states between SiO2 and Si.

原文???core.languages.en_GB???
主出版物標題2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
發行者Institute of Electrical and Electronics Engineers Inc.
頁面27-30
頁數4
ISBN(列印)0780393392, 9780780393394
DOIs
出版狀態已出版 - 2005
事件2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
持續時間: 19 12月 200521 12月 2005

出版系列

名字2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

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???event.eventtypes.event.conference???2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
國家/地區Hong Kong
城市Howloon
期間19/12/0521/12/05

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