Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

L. W. Cheng; S. L. Cheng; J. Y. Chen; L. J. Chen; B. Y. Tsui

doi:10.1016/S0040-6090(99)00546-5

Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

L. W. Cheng, S. L. Cheng, J. Y. Chen, L. J. Chen, B. Y. Tsui

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

36 引文斯高帕斯（Scopus）

摘要

The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×10¹⁵ N⁺/cm² implanted samples annealed at 400-750 °C and for the 2×10¹⁵ N₂⁺/cm² implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

原文	???core.languages.en_GB???
頁（從 - 到）	412-416
頁數	5
期刊	Thin Solid Films
卷	355
DOIs	https://doi.org/10.1016/S0040-6090(99)00546-5
出版狀態	已出版 - 1 11月 1999
事件	Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA 持續時間: 12 4月 1999 → 15 4月 1999

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10.1016/S0040-6090(99)00546-5

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title = "Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions",

abstract = "The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.",

author = "Cheng, {L. W.} and Cheng, {S. L.} and Chen, {J. Y.} and Chen, {L. J.} and Tsui, {B. Y.}",

note = "Funding Information: The research was supported by the National Science Council through a grant No. NSC88-2215-E007-010 and the Electronics Research and Service Organization. ; Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films ; Conference date: 12-04-1999 Through 15-04-1999",

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AU - Cheng, L. W.

AU - Cheng, S. L.

AU - Chen, J. Y.

AU - Chen, L. J.

AU - Tsui, B. Y.

N1 - Funding Information: The research was supported by the National Science Council through a grant No. NSC88-2215-E007-010 and the Electronics Research and Service Organization.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

AB - The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

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T2 - Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films

Y2 - 12 April 1999 through 15 April 1999

ER -

Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

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