Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, H. H. Cheng

研究成果: 雜誌貢獻期刊論文同行評審

46 引文 斯高帕斯(Scopus)

摘要

The effect of thickness of a low-temperature silicon (LT-Si) buffer layer on the growth of SiGe overlayer was investigated. The solid-source molecular beam epitaxy method was used to grow 300-nm-thick Si0.7Ge0.3 films on 50- to 300-nm-thick Lt-Si buffer layers at 450 °C. Transmission electron microscopy, Raman scattering and x-ray rocking curve measurements were used to study the effects of LT-Si buffer layer thickness on the quality of the SiGe layer. It was found that surface roughness was independent of the LT-Si thickness and the threading dislocation density decreases with the thickness of the LT-Si buffer.

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頁(從 - 到)6880-6885
頁數6
期刊Journal of Applied Physics
92
發行號11
DOIs
出版狀態已出版 - 1 12月 2002

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