摘要
The effect of thickness of a low-temperature silicon (LT-Si) buffer layer on the growth of SiGe overlayer was investigated. The solid-source molecular beam epitaxy method was used to grow 300-nm-thick Si0.7Ge0.3 films on 50- to 300-nm-thick Lt-Si buffer layers at 450 °C. Transmission electron microscopy, Raman scattering and x-ray rocking curve measurements were used to study the effects of LT-Si buffer layer thickness on the quality of the SiGe layer. It was found that surface roughness was independent of the LT-Si thickness and the threading dislocation density decreases with the thickness of the LT-Si buffer.
原文 | ???core.languages.en_GB??? |
---|---|
頁(從 - 到) | 6880-6885 |
頁數 | 6 |
期刊 | Journal of Applied Physics |
卷 | 92 |
發行號 | 11 |
DOIs | |
出版狀態 | 已出版 - 1 12月 2002 |