Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

Wei Ting Hsu; Yu An Liao; Feng Chang Hsu; Pei Chin Chiu; Jen Inn Chyi; Wen Hao Chang

doi:10.1063/1.3624464

Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

Wei Ting Hsu, Yu An Liao, Feng Chang Hsu, Pei Chin Chiu, Jen Inn Chyi, Wen Hao Chang

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

33 引文斯高帕斯（Scopus）

摘要

The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.

原文	???core.languages.en_GB???
文章編號	073108
期刊	Applied Physics Letters
卷	99
發行號	7
DOIs	https://doi.org/10.1063/1.3624464
出版狀態	已出版 - 15 8月 2011

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@article{6c0ab117f5a24b7b870c0f1cd36a7fc6,

title = "Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots",

abstract = "The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.",

author = "Hsu, {Wei Ting} and Liao, {Yu An} and Hsu, {Feng Chang} and Chiu, {Pei Chin} and Chyi, {Jen Inn} and Chang, {Wen Hao}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan under Grant No. NSC 99-2112-M-009-008-MY2. ",

year = "2011",

month = aug,

day = "15",

doi = "10.1063/1.3624464",

language = "???core.languages.en_GB???",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "7",

}

TY - JOUR

T1 - Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

AU - Hsu, Wei Ting

AU - Liao, Yu An

AU - Hsu, Feng Chang

AU - Chiu, Pei Chin

AU - Chyi, Jen Inn

AU - Chang, Wen Hao

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan under Grant No. NSC 99-2112-M-009-008-MY2.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.

AB - The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.

UR - http://www.scopus.com/inward/record.url?scp=80052082750&partnerID=8YFLogxK

U2 - 10.1063/1.3624464

DO - 10.1063/1.3624464

M3 - 期刊論文

AN - SCOPUS:80052082750

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073108

ER -

Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

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