Effects of dot height uniformity on the performance of 1.3 μm InAs quantum dot lasers

Wei Sheng Liu, Holin Chang, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3 μm QD laser diodes. Devices that are prepared using the optimized growth conditions exhibit threshold current as low as 50 mA, and internal quantum efficiency as high as 63% under continuous-wave operation.

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主出版物標題2005 5th IEEE Conference on Nanotechnology
發行者IEEE Computer Society
頁面784-787
頁數4
ISBN(列印)0780391993, 9780780391994
DOIs
出版狀態已出版 - 2005
事件2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
持續時間: 11 7月 200515 7月 2005

出版系列

名字2005 5th IEEE Conference on Nanotechnology
2

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???event.eventtypes.event.conference???2005 5th IEEE Conference on Nanotechnology
國家/地區Japan
城市Nagoya
期間11/07/0515/07/05

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