@inproceedings{fd349266d1924779b10ec3b21ead6e29,
title = "Effects of Channel Thickness on DC/RF Performance of InAlGaN/AlN/GaN HEMTs",
abstract = "In this paper, we report the effect of 90-nm-gate InAlGaN/GaN HEMTs with 40 and 100 nm GaN channel thickness. The HEMTs with 40/100 nm channel layer exhibit an IDS sat of 839/931 mA/mm, and gm of 271/250 mS/mm, respectively. These results indicate that the thin channel devices have better control on channel conductivity, resulting in a higher peak gm. As for the RF performance, the cut-off frequency (FT) of the devices with 40/100 nm channel thickness is 112.3 GHz/94.2 GHz, respectively.",
author = "De Shieh and Lee, \{Zheng Fong\} and Lee, \{Ming Yuan\} and Chen, \{Hui Yu\} and Hsieh, \{Chang Yan\} and Tu, \{Po Tsung\} and Yeh, \{Po Chun\} and Sheu, \{Shyh Shyuan\} and Lo, \{Wei Chung\} and Chang, \{Shih Chieh\} and Shen, \{Chang Hong\} and Shieh, \{Jia Min\} and Chyi, \{Jen Inn\}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 ; Conference date: 22-04-2024 Through 25-04-2024",
year = "2024",
doi = "10.1109/VLSITSA60681.2024.10546352",
language = "???core.languages.en\_GB???",
series = "2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings",
}