@inproceedings{fd349266d1924779b10ec3b21ead6e29,
title = "Effects of Channel Thickness on DC/RF Performance of InAlGaN/AlN/GaN HEMTs",
abstract = "In this paper, we report the effect of 90-nm-gate InAlGaN/GaN HEMTs with 40 and 100 nm GaN channel thickness. The HEMTs with 40/100 nm channel layer exhibit an IDS sat of 839/931 mA/mm, and gm of 271/250 mS/mm, respectively. These results indicate that the thin channel devices have better control on channel conductivity, resulting in a higher peak gm. As for the RF performance, the cut-off frequency (FT) of the devices with 40/100 nm channel thickness is 112.3 GHz/94.2 GHz, respectively.",
author = "De Shieh and Lee, {Zheng Fong} and Lee, {Ming Yuan} and Chen, {Hui Yu} and Hsieh, {Chang Yan} and Tu, {Po Tsung} and Yeh, {Po Chun} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Chang, {Shih Chieh} and Shen, {Chang Hong} and Shieh, {Jia Min} and Chyi, {Jen Inn}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 ; Conference date: 22-04-2024 Through 25-04-2024",
year = "2024",
doi = "10.1109/VLSITSA60681.2024.10546352",
language = "???core.languages.en_GB???",
series = "2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings",
}