Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• Single Quantum Well 100%
• Thermal Annealing Effect 100%
• Quantum Well Structure 100%
• Indium Content 100%
• Stimulated Emission 100%
• Emission Peak 83%
• Annealing 50%
• Quantum Well 50%
• Blue Shift 50%
• Optical Pumping 33%
• Quantized Energy 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 16%
• Optical Properties 16%
• Thermal Annealing 16%
• Low Pressure 16%
• Photoluminescence Measurements 16%
• Interdiffusion 16%
• Spectrum Measurement 16%
• High-temperature Treatment 16%
• Composition Fluctuations 16%
• Spatially Resolved Spectra 16%
• Edge Emitting 16%
• InxGa1-xN 16%
• Surface Emitting 16%

Physics

• Indium 100%
• Quantum Wells 100%
• Stimulated Emission 100%
• Optical Pumping 33%
• Blue Shift 16%
• Metalorganic Chemical Vapor Deposition 16%
• Red Shift 16%
• Photoluminescence 16%
• Optical Property 16%