Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

搜尋結果

• 已完成

  具多重量子井結構之高功率LED晶片電熱光耦合研究(1/3)

  Chen, J.-C. (PI)

  1/08/15 → 31/07/16

  研究計畫: Research

  • Light-emitting Diodes 100%
  • Carrier Recombination 50%
  • High Power Led 50%
  • Optical Coupling 50%
  • Current Density Distribution 50%