Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc Hung Pham; Jyh Chen Chen; Farn Shiun Hwu; Huy Bich Nguyen

doi:10.1364/FTS.2016.JW4A.7

Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc Hung Pham, Jyh Chen Chen, Farn Shiun Hwu, Huy Bich Nguyen

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

原文	???core.languages.en_GB???
主出版物標題	Fourier Transform Spectroscopy, FTS 2016
發行者	Optica Publishing Group (formerly OSA)
頁面	3
頁數	1
ISBN（列印）	9780960038046
DOIs	https://doi.org/10.1364/FTS.2016.JW4A.7
出版狀態	已出版 - 2016
事件	Fourier Transform Spectroscopy, FTS 2016 - Leipzig, Germany 持續時間: 14 11月 2016 → 17 11月 2016

出版系列

名字	Optics InfoBase Conference Papers
ISSN（電子）	2162-2701

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	Fourier Transform Spectroscopy, FTS 2016
國家/地區	Germany
城市	Leipzig
期間	14/11/16 → 17/11/16

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10.1364/FTS.2016.JW4A.7

具多重量子井結構之高功率LED晶片電熱光耦合研究(1/3)
Chen, J.-C. (PI)
1/08/15 → 31/07/16
研究計畫: Research

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Pham, Q. H., Chen, J. C., Hwu, F. S., & Nguyen, H. B. (2016). Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips. 於 Fourier Transform Spectroscopy, FTS 2016 (頁 3). (Optics InfoBase Conference Papers). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/FTS.2016.JW4A.7

@inproceedings{bc895ee8c68c4a00a7a8bb9b5c25bdfa,

title = "Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips",

abstract = "The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.",

author = "Pham, {Quoc Hung} and Chen, {Jyh Chen} and Hwu, {Farn Shiun} and Nguyen, {Huy Bich}",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; Fourier Transform Spectroscopy, FTS 2016 ; Conference date: 14-11-2016 Through 17-11-2016",

year = "2016",

doi = "10.1364/FTS.2016.JW4A.7",

language = "???core.languages.en_GB???",

isbn = "9780960038046",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

pages = "3",

booktitle = "Fourier Transform Spectroscopy, FTS 2016",

}

Pham, QH, Chen, JC, Hwu, FS & Nguyen, HB 2016, Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips. 於 Fourier Transform Spectroscopy, FTS 2016. Optics InfoBase Conference Papers, Optica Publishing Group (formerly OSA), 頁 3, Fourier Transform Spectroscopy, FTS 2016, Leipzig, Germany, 14/11/16. https://doi.org/10.1364/FTS.2016.JW4A.7

Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips. / Pham, Quoc Hung; Chen, Jyh Chen; Hwu, Farn Shiun 等.
Fourier Transform Spectroscopy, FTS 2016. Optica Publishing Group (formerly OSA), 2016. p. 3 (Optics InfoBase Conference Papers).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

AU - Pham, Quoc Hung

AU - Chen, Jyh Chen

AU - Hwu, Farn Shiun

AU - Nguyen, Huy Bich

PY - 2016

Y1 - 2016

N2 - The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

AB - The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

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U2 - 10.1364/FTS.2016.JW4A.7

DO - 10.1364/FTS.2016.JW4A.7

M3 - 會議論文篇章

AN - SCOPUS:85136238634

SN - 9780960038046

T3 - Optics InfoBase Conference Papers

SP - 3

BT - Fourier Transform Spectroscopy, FTS 2016

PB - Optica Publishing Group (formerly OSA)

T2 - Fourier Transform Spectroscopy, FTS 2016

Y2 - 14 November 2016 through 17 November 2016

ER -

Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

摘要

出版系列

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指紋

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具多重量子井結構之高功率LED晶片電熱光耦合研究(1/3)

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