Effect of substrate biasing on the epitaxial growth and structural properties of rf magnetron sputtered germanium buffer layer on silicon

Engineering & Materials Science

• Buffer layers 100%
• Epitaxial growth 98%
• Germanium 94%
• Structural properties 76%
• Silicon 55%
• Lattice constants 52%
• Full width at half maximum 51%
• Substrates 49%
• Single crystals 40%
• Crystalline materials 36%
• Diffraction patterns 24%
• Magnetron sputtering 23%
• Photodetectors 22%
• Solar cells 18%
• Transmission electron microscopy 18%
• X ray diffraction 17%
• Thin films 16%
• Fabrication 12%
• Defects 12%

Physics & Astronomy

• germanium 62%
• buffers 59%
• silicon 37%
• single crystals 21%
• holders 19%
• photometers 15%
• radio frequencies 15%
• magnetron sputtering 14%
• diffraction patterns 14%
• solar cells 13%
• transmission electron microscopy 11%
• fabrication 10%
• shift 10%
• defects 9%
• diffraction 9%
• thin films 9%
• x rays 7%

Chemical Compounds

• Epitaxial Growth 85%
• Buffer Solution 45%
• Lattice Constant 39%
• Liquid Film 33%
• Holder 21%
• Magnetron Sputtering 20%
• Solar Cell 15%
• Transmission Electron Microscopy 11%
• X-Ray Diffraction 8%