Effect of Si bicrystal on the formation of nano-scaled silicides

C. L. Hsin, W. W. Wu, L. J. Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Regularly distributed dislocation network with a controllable spacing could be formed by wafer bonding. Different kinds of Si bicrystals were fabricated by (001), (111) and (110) Si wafers bonded with (001) SOI. NiSi2 formed on the bicrystal was found to be affected by the underlying dislocation arrays. The nanostructures were confined by the dislocation grids. It demonstrates that by means of controlling the surface stress arrangement, the shape of the silicide nanostructures could be controlled and a variety of nanostructures could be obtained. The observation is conductive to the basic understanding of the stress effect on the formation of the silicide nanostructures on Si bicrystals.

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主出版物標題ECS Transactions - Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD
發行者Electrochemical Society Inc.
頁面83-88
頁數6
版本8
ISBN(電子)9781566775748
ISBN(列印)9781604238938
DOIs
出版狀態已出版 - 2007
事件1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting - Washington, DC, United States
持續時間: 7 10月 200712 10月 2007

出版系列

名字ECS Transactions
號碼8
11
ISSN(列印)1938-5862
ISSN(電子)1938-6737

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???event.eventtypes.event.conference???1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting
國家/地區United States
城市Washington, DC
期間7/10/0712/10/07

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