摘要
A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.
原文 | ???core.languages.en_GB??? |
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文章編號 | DM2D.2 |
期刊 | Optics InfoBase Conference Papers |
出版狀態 | 已出版 - 2015 |
事件 | Solid-State and Organic Lighting, SOLED 2015 - Suzhou, China 持續時間: 2 11月 2015 → 5 11月 2015 |