Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Quoc Hung Pham, Farn Shiun Hwu, Huy Bich Nguyen, Jyh Chen Chen

研究成果: 雜誌貢獻會議論文同行評審

摘要

A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.

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文章編號DM2D.2
期刊Optics InfoBase Conference Papers
出版狀態已出版 - 2015
事件Solid-State and Organic Lighting, SOLED 2015 - Suzhou, China
持續時間: 2 11月 20155 11月 2015

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