@article{c5b5cd7d39c1404687e8f167d8efb9e2,
title = "Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth",
abstract = "The effect of m-plane GaN substrate miscut on the growth of InGaN/GaN quantum wells (QWs) was investigated. It was found that the miscut toward [0 0 0 1] c+-axis resulted in an increase of In incorporation efficiency and in a green-shift of the QW emission, while the miscut toward [1 1 2 0] a-axis resulted in even higher In compositions but it also led to an increased epitaxial surface roughness and deterioration of the QW structures. The results indicated that miscut toward a-axis is undesirable while miscut toward c+-axis is beneficial for achieving longer wavelength emission in QWs grown on m-plane GaN substrates.",
keywords = "A3. Metalorganic chemical vapor deposition, B1. Nitrides, B2. Semiconducting III-V materials, B3. Light emitting diodes",
author = "Lai, {K. Y.} and T. Paskova and Wheeler, {V. D.} and Grenko, {J. A.} and Johnson, {M. A.L.} and K. Udwary and Preble, {E. A.} and Evans, {K. R.}",
note = "Funding Information: The authors would like to thank Fred Stevie in Analytical Instrumentation Facility at North Carolina State University for the help in SIMS measurement. Partial support by ARO under Phase II W911NF-07-C-0099 contract for non-polar bulk development at Kyma Technologies, Inc., is acknowledged.",
year = "2010",
month = mar,
day = "15",
doi = "10.1016/j.jcrysgro.2010.01.020",
language = "???core.languages.en_GB???",
volume = "312",
pages = "902--905",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
number = "7",
}