Effect of interfacial dissolution on electromigration failures at metals interface

E. J. Lin; Y. C. Hsu; Y. C. Chuang; C. Y. Liu

doi:10.1007/s10854-017-7391-7

Effect of interfacial dissolution on electromigration failures at metals interface

E. J. Lin, Y. C. Hsu, Y. C. Chuang, C. Y. Liu

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This work investigated the effect of interfacial dissolution on electromigration failures at metal micro-joint Interface. A theoretical model is first developed to define the critical temperature, which determines the EM-induced failure (either voiding or dissolution) at the metal micro-joint interface. Using the present developed theoretical model, a critical temperature (75.19 °C) is calculated out and explains the failure modes well at the Sn/Cu micro-joint interfaces observed in the present works. EM-induced Cu consumption is the EM failure mode at the test temperature over 75.19 °C (155, 180, and 200 °C) and (2) EM-induced voids is the EM failure mode at the test temperature below 75.19 °C (40 °C).

原文	???core.languages.en_GB???
頁（從 - 到）	15149-15153
頁數	5
期刊	Journal of Materials Science: Materials in Electronics
卷	28
發行號	20
DOIs	https://doi.org/10.1007/s10854-017-7391-7
出版狀態	已出版 - 1 10月 2017

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10.1007/s10854-017-7391-7

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@article{f281d1f265d54cd4a5d1be1cb9cbb5b9,

title = "Effect of interfacial dissolution on electromigration failures at metals interface",

abstract = "This work investigated the effect of interfacial dissolution on electromigration failures at metal micro-joint Interface. A theoretical model is first developed to define the critical temperature, which determines the EM-induced failure (either voiding or dissolution) at the metal micro-joint interface. Using the present developed theoretical model, a critical temperature (75.19 °C) is calculated out and explains the failure modes well at the Sn/Cu micro-joint interfaces observed in the present works. EM-induced Cu consumption is the EM failure mode at the test temperature over 75.19 °C (155, 180, and 200 °C) and (2) EM-induced voids is the EM failure mode at the test temperature below 75.19 °C (40 °C).",

author = "Lin, {E. J.} and Hsu, {Y. C.} and Chuang, {Y. C.} and Liu, {C. Y.}",

note = "Publisher Copyright: {\textcopyright} 2017, Springer Science+Business Media, LLC.",

year = "2017",

month = oct,

day = "1",

doi = "10.1007/s10854-017-7391-7",

language = "???core.languages.en_GB???",

volume = "28",

pages = "15149--15153",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "20",

}

TY - JOUR

T1 - Effect of interfacial dissolution on electromigration failures at metals interface

AU - Lin, E. J.

AU - Hsu, Y. C.

AU - Chuang, Y. C.

AU - Liu, C. Y.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - This work investigated the effect of interfacial dissolution on electromigration failures at metal micro-joint Interface. A theoretical model is first developed to define the critical temperature, which determines the EM-induced failure (either voiding or dissolution) at the metal micro-joint interface. Using the present developed theoretical model, a critical temperature (75.19 °C) is calculated out and explains the failure modes well at the Sn/Cu micro-joint interfaces observed in the present works. EM-induced Cu consumption is the EM failure mode at the test temperature over 75.19 °C (155, 180, and 200 °C) and (2) EM-induced voids is the EM failure mode at the test temperature below 75.19 °C (40 °C).

AB - This work investigated the effect of interfacial dissolution on electromigration failures at metal micro-joint Interface. A theoretical model is first developed to define the critical temperature, which determines the EM-induced failure (either voiding or dissolution) at the metal micro-joint interface. Using the present developed theoretical model, a critical temperature (75.19 °C) is calculated out and explains the failure modes well at the Sn/Cu micro-joint interfaces observed in the present works. EM-induced Cu consumption is the EM failure mode at the test temperature over 75.19 °C (155, 180, and 200 °C) and (2) EM-induced voids is the EM failure mode at the test temperature below 75.19 °C (40 °C).

UR - http://www.scopus.com/inward/record.url?scp=85021898221&partnerID=8YFLogxK

U2 - 10.1007/s10854-017-7391-7

DO - 10.1007/s10854-017-7391-7

M3 - 期刊論文

AN - SCOPUS:85021898221

SN - 0957-4522

VL - 28

SP - 15149

EP - 15153

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 20

ER -

Effect of interfacial dissolution on electromigration failures at metals interface

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