Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

K. Y. Lai; G. J. Lin; Y. L. Lai; Y. F. Chen; J. H. He

doi:10.1063/1.3327331

Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

K. Y. Lai, G. J. Lin, Y. L. Lai, Y. F. Chen, J. H. He

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

89 引文斯高帕斯（Scopus）

摘要

Severe In fluctuation was observed in In_0.3Ga_0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

原文	???core.languages.en_GB???
文章編號	081103
期刊	Applied Physics Letters
卷	96
發行號	8
DOIs	https://doi.org/10.1063/1.3327331
出版狀態	已出版 - 2010

存取文件

10.1063/1.3327331

引用此

@article{5706e4d102b947519d258a3d3a21f9fa,

title = "Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells",

abstract = "Severe In fluctuation was observed in In0.3Ga0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.",

author = "Lai, {K. Y.} and Lin, {G. J.} and Lai, {Y. L.} and Chen, {Y. F.} and He, {J. H.}",

year = "2010",

doi = "10.1063/1.3327331",

language = "???core.languages.en_GB???",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "8",

}

TY - JOUR

T1 - Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

AU - Lai, K. Y.

AU - Lin, G. J.

AU - Lai, Y. L.

AU - Chen, Y. F.

AU - He, J. H.

PY - 2010

Y1 - 2010

N2 - Severe In fluctuation was observed in In0.3Ga0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

AB - Severe In fluctuation was observed in In0.3Ga0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

UR - http://www.scopus.com/inward/record.url?scp=77749246078&partnerID=8YFLogxK

U2 - 10.1063/1.3327331

DO - 10.1063/1.3327331

M3 - 期刊論文

AN - SCOPUS:77749246078

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081103

ER -

Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

摘要

存取文件

指紋

引用此