TY - JOUR
T1 - Effect of field-annealing on magnetostriction and tunneling magnetoresistance of Co/AlOx/Co/IrMn junctions
AU - Chen, Yuan Tsung
AU - Tseng, Jiun Yi
AU - Chang, C. C.
AU - Liu, W. C.
AU - Jang, Jason Shian Ching
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China and I-Shou University for financially supporting this research under Contract No. NSC97-2112-M-214-001-MY3 and ISU98-S-02.
PY - 2010/1/7
Y1 - 2010/1/7
N2 - The magnetostriction (λs) and tunneling magnetoresistance (TMR) of two Co/AlOx/Co/IrMn MTJ systems that were deposited on Si(1 0 0) and glass substrate were examined at RT and field-annealing with various thicknesses of AlOx. One structure was a Si(1 0 0)/Ta/Co/AlOx/Co/IrMn/Ta system, and the other was a glass/Co/AlOx/Co/IrMn system. The experimental results reveal that, in the Si(1 0 0)/Ta/Co/AlOx/Co/IrMn/Ta system, the ratio of TMR is maximal under the field-annealing condition, and is optimal at an AlOx thickness of 26 Å as well as in the RT condition. EDS analysis demonstrates that, these results are related to the distribution of Co and O atoms, because the oxidation of AlOx is most extensive at a thickness of 26 Å. In the glass/Co/AlOx/Co/IrMn system, λs does not significantly vary under the RT condition; however, λs is maximized (-20 ppm) by field-annealing at an AlOx thickness of 17 Å. The abundance of Co and O in the system dominates the behavior of λs, according to EDS analysis. Finally, the minimum value of λs and the maximum ratio of TMR are -8 ppm and 60%, respectively, at an AlOx thickness of 26 Å under the field-annealing condition.
AB - The magnetostriction (λs) and tunneling magnetoresistance (TMR) of two Co/AlOx/Co/IrMn MTJ systems that were deposited on Si(1 0 0) and glass substrate were examined at RT and field-annealing with various thicknesses of AlOx. One structure was a Si(1 0 0)/Ta/Co/AlOx/Co/IrMn/Ta system, and the other was a glass/Co/AlOx/Co/IrMn system. The experimental results reveal that, in the Si(1 0 0)/Ta/Co/AlOx/Co/IrMn/Ta system, the ratio of TMR is maximal under the field-annealing condition, and is optimal at an AlOx thickness of 26 Å as well as in the RT condition. EDS analysis demonstrates that, these results are related to the distribution of Co and O atoms, because the oxidation of AlOx is most extensive at a thickness of 26 Å. In the glass/Co/AlOx/Co/IrMn system, λs does not significantly vary under the RT condition; however, λs is maximized (-20 ppm) by field-annealing at an AlOx thickness of 17 Å. The abundance of Co and O in the system dominates the behavior of λs, according to EDS analysis. Finally, the minimum value of λs and the maximum ratio of TMR are -8 ppm and 60%, respectively, at an AlOx thickness of 26 Å under the field-annealing condition.
KW - Field-annealing effect
KW - Magnetic films and multilayers
KW - Magnetoresistance
KW - Magnetostriction (λ)
KW - Oxidation
UR - http://www.scopus.com/inward/record.url?scp=70649096079&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2009.09.062
DO - 10.1016/j.jallcom.2009.09.062
M3 - 期刊論文
AN - SCOPUS:70649096079
SN - 0925-8388
VL - 489
SP - 242
EP - 245
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
IS - 1
ER -