Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing

Chang Cheng Chuo, Mao Nan Chang, Fu Ming Pan, Chia Ming Lee, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

24 引文 斯高帕斯(Scopus)

摘要

The optical properties of thermally annealed InGaN/GaN multiple quantum wells were investigated by low-temperature photoluminescence measurements. It is found that the photoluminescence peak exhibits a redshift followed by a blueshift as the annealing time is increased. In contrast, the assigned photoluminescence peak from an In-rich dot-like structure shows a monotonic blueshift with more annealing time. Transmission electron microscopic observation confirms that the density of dot-like structures is reduced after thermal annealing, indicating that phase separation does not take place in these samples. Instead, in-plane and out-plane outdiffusion of dot-like structures is proposed to account for the spectral shift with more annealing time. Based on this diffusion model, a quantized state transition in the quantum well along with the composition inhomogeneity and piezoelectric field is considered to be the dominant luminescence mechanism.

原文???core.languages.en_GB???
頁(從 - 到)1138-1140
頁數3
期刊Applied Physics Letters
80
發行號7
DOIs
出版狀態已出版 - 18 2月 2002

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