Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors

S. Noor Mohammad, J. Chen, J. I. Chyi, H. Morkoç

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy with nonuniform doping in the base region have been studied. Experimental measurements indicate that an optimization of the base doping leads to substantial improvement in the current gain and related properties. Unequal variations of the band-gap narrowing effect and Fermi-Dirac statistics effect seem to underlie this improvement. It is found that, in general, the higher the nonuniformity of the base doping, the lower is the offset voltage of the HBT.

原文???core.languages.en_GB???
頁(從 - 到)463-465
頁數3
期刊Applied Physics Letters
57
發行號5
DOIs
出版狀態已出版 - 1990

指紋

深入研究「Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors」主題。共同形成了獨特的指紋。

引用此