E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

H. K. Lin; D. W. Fan; Y. C. Lin; P. C. Chiu; C. Y. Chien; P. W. Li; J. I. Chyi; C. H. Ko; T. M. Kuan; M. K. Hsieh; W. C. Lee; C. H. Wann

doi:10.1016/j.sse.2010.01.014

E-beam-evaporated Al₂O₃ for InAs/AlSb metal-oxide-semiconductor HEMT development

H. K. Lin, D. W. Fan, Y. C. Lin, P. C. Chiu, C. Y. Chien, P. W. Li, J. I. Chyi, C. H. Ko, T. M. Kuan, M. K. Hsieh, W. C. Lee, C. H. Wann

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

20 引文斯高帕斯（Scopus）

摘要

Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al₂O₃ between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal-oxide-semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 μm gate length yields DC performance of I_DSS = 286 mA/mm and G_m = 495 mS/mm and RF performance of f_T = 10.1 GHz and f_MAX = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated.

原文	???core.languages.en_GB???
頁（從 - 到）	505-508
頁數	4
期刊	Solid-State Electronics
卷	54
發行號	5
DOIs	https://doi.org/10.1016/j.sse.2010.01.014
出版狀態	已出版 - 5月 2010

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10.1016/j.sse.2010.01.014

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title = "E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development",

abstract = "Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al2O3 between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal-oxide-semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 μm gate length yields DC performance of IDSS = 286 mA/mm and Gm = 495 mS/mm and RF performance of fT = 10.1 GHz and fMAX = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated.",

keywords = "Impact ionization, InAs, MOS-HEMT",

author = "Lin, {H. K.} and Fan, {D. W.} and Lin, {Y. C.} and Chiu, {P. C.} and Chien, {C. Y.} and Li, {P. W.} and Chyi, {J. I.} and Ko, {C. H.} and Kuan, {T. M.} and Hsieh, {M. K.} and Lee, {W. C.} and Wann, {C. H.}",

year = "2010",

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doi = "10.1016/j.sse.2010.01.014",

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volume = "54",

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TY - JOUR

T1 - E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

AU - Lin, H. K.

AU - Fan, D. W.

AU - Lin, Y. C.

AU - Chiu, P. C.

AU - Chien, C. Y.

AU - Li, P. W.

AU - Chyi, J. I.

AU - Ko, C. H.

AU - Kuan, T. M.

AU - Hsieh, M. K.

AU - Lee, W. C.

AU - Wann, C. H.

PY - 2010/5

Y1 - 2010/5

N2 - Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al2O3 between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal-oxide-semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 μm gate length yields DC performance of IDSS = 286 mA/mm and Gm = 495 mS/mm and RF performance of fT = 10.1 GHz and fMAX = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated.

AB - Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al2O3 between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal-oxide-semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 μm gate length yields DC performance of IDSS = 286 mA/mm and Gm = 495 mS/mm and RF performance of fT = 10.1 GHz and fMAX = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated.

KW - Impact ionization

KW - InAs

KW - MOS-HEMT

UR - http://www.scopus.com/inward/record.url?scp=77949277334&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.01.014

DO - 10.1016/j.sse.2010.01.014

M3 - 期刊論文

AN - SCOPUS:77949277334

VL - 54

SP - 505

EP - 508

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 5

ER -

E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

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E-beam-evaporated Al₂O₃ for InAs/AlSb metal-oxide-semiconductor HEMT development