E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

H. K. Lin, D. W. Fan, Y. C. Lin, P. C. Chiu, C. Y. Chien, P. W. Li, J. I. Chyi, C. H. Ko, T. M. Kuan, M. K. Hsieh, W. C. Lee, C. H. Wann

研究成果: 雜誌貢獻期刊論文同行評審

20 引文 斯高帕斯(Scopus)

摘要

Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al2O3 between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal-oxide-semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 μm gate length yields DC performance of IDSS = 286 mA/mm and Gm = 495 mS/mm and RF performance of fT = 10.1 GHz and fMAX = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated.

原文???core.languages.en_GB???
頁(從 - 到)505-508
頁數4
期刊Solid-State Electronics
54
發行號5
DOIs
出版狀態已出版 - 5月 2010

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