TY - JOUR
T1 - Dynamic analysis of high-power and high-speed near-ballistic unitraveling carrier photodiodes at W-band
AU - Wu, Y. S.
AU - Shi, J. W.
N1 - Funding Information:
Manuscript received January 23, 2008; revised March 26, 2008. This work was supported by the National Science Council of Taiwan under Grant NSC-96-2221-E-008-121-MY3. The authors are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). Color versions of some of the figures in this letter are available online at http:// ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2008.925195 Fig. 1. (a) Top view and (b) cross-sectional view of the demonstrated device. (c) Top view and cross-sectional view of the integrated wet-etched substrate mi-crolens. The values of and h for the microlens are 270 and 6 m, respectively.
PY - 2008/7/1
Y1 - 2008/7/1
N2 - In this letter, we demonstrate and analyze the high-speed and high-power performance of a back-illuminated near-ballistic unitraveling-carrier photodiode (PD) at TV-band. We utilize a three-port equivalent-circuit-modeling technique to show that the extracted average electron drift velocity in the whole epi-structure is around 5 × 107 cm/s, which corresponds to an ultrahigh transit time limited bandwidth (∼400 GHz). Such high internal bandwidth means that the demonstrated device can thus release the burden imposed on downscaling the device active area and epi-layer thickness for achieving ultrahigh-speed performance of PDs. With a collector thickness of 410 nm and an active area of 64 μm2, we can achieve a wide 3-dB bandwidth (120 GHz), and high saturation current bandwidth product performance (120 GHz, 24.6 mA, 2952 mAGHz) under 25 Ω loading at W-band.
AB - In this letter, we demonstrate and analyze the high-speed and high-power performance of a back-illuminated near-ballistic unitraveling-carrier photodiode (PD) at TV-band. We utilize a three-port equivalent-circuit-modeling technique to show that the extracted average electron drift velocity in the whole epi-structure is around 5 × 107 cm/s, which corresponds to an ultrahigh transit time limited bandwidth (∼400 GHz). Such high internal bandwidth means that the demonstrated device can thus release the burden imposed on downscaling the device active area and epi-layer thickness for achieving ultrahigh-speed performance of PDs. With a collector thickness of 410 nm and an active area of 64 μm2, we can achieve a wide 3-dB bandwidth (120 GHz), and high saturation current bandwidth product performance (120 GHz, 24.6 mA, 2952 mAGHz) under 25 Ω loading at W-band.
KW - High-power photodiode (PD)
KW - Photodiodes (PDs)
KW - W-band
UR - http://www.scopus.com/inward/record.url?scp=58149521260&partnerID=8YFLogxK
U2 - 10.1109/LPT.2008.925195
DO - 10.1109/LPT.2008.925195
M3 - 期刊論文
AN - SCOPUS:58149521260
SN - 1041-1135
VL - 20
SP - 1160
EP - 1162
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 13
ER -