Dynamic analysis of a Si/SiGe-based impact ionization avalanche transit time photodiode with an ultrahigh gain-bandwidth product

Keyphrases

• Dynamic Analysis 100%
• SiGe 100%
• Photodiode 100%
• Impact Ionization 100%
• Avalanche Transit Time 100%
• Gain-bandwidth Product 100%
• Ultra High Gain 100%
• Negative Photoconductance 100%
• Measurement Results 50%
• Eye Opening 50%
• 3-dB Bandwidth 50%
• Dynamic Performance 50%
• Si Substrate 50%
• Bias Voltage 50%
• Resonant Frequency 50%
• Modeling Results 50%
• Bandwidth Enhancement 50%
• External Efficiency 50%
• Enhancement Effect 50%
• Reverse Leakage Current 50%
• Transit Time 50%
• Avalanche Photodiode 50%

Engineering

• Photodiode 100%
• Internals 100%
• Impact Ionization 100%
• Gain-Bandwidth Product 100%
• Db Bandwidth 50%
• Dynamic Performance 50%
• Eye Opening 50%
• Bias Voltage 50%
• Resonant Frequency 50%
• Si Substrate 50%
• External Efficiency 50%
• Bandwidth Performance 50%
• Avalanche Photodiode 50%
• Frequency Increase 50%

Physics

• Photodiode 100%
• Resonant Frequency 33%