TY - JOUR
T1 - Dual-depletion-region electroabsorption modulator with evanescently coupled waveguide for high-speed (>40 GHz) and low driving-voltage performance
AU - Shi, J. W.
AU - Shiao, A. C.
AU - Chu, C. C.
AU - Wu, Y. S.
N1 - Funding Information:
Manuscript received June 16, 2006; revised December 1, 2006. This work was supported by the National Science Council of Taiwan under Grant NSC-95-2215-E-008-003-and Grant NSC 95-2752-E-008-001-PAE. The authors are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.891637
PY - 2007/3/1
Y1 - 2007/3/1
N2 - We demonstrate a novel structure of a electroabsorption modulator (EAM) at a 1.55-μm wavelength. By incorporating the epilayer structure of dual-depletion-region EAM with an evanescently coupled optical waveguide, the demonstrated device can achieve low electrical return loss (-20 dB at ∼60 GHz), wide 3-dB bandwidth (60 GHz) of electrical transmission loss, wide electrical-to-optical bandwidth (45 GHz), and low 20-dB static driving voltage (V20dB, 1.65 V) with extremely small polarization dependency. This new structure can not only achieve excellent figures-of-merit but release the burden imposed on downscaling the core width or length of high-speed/low driving-voltage EAM without using epitaxial regrowth or ion-implantation techniques to isolate the active and passive regions.
AB - We demonstrate a novel structure of a electroabsorption modulator (EAM) at a 1.55-μm wavelength. By incorporating the epilayer structure of dual-depletion-region EAM with an evanescently coupled optical waveguide, the demonstrated device can achieve low electrical return loss (-20 dB at ∼60 GHz), wide 3-dB bandwidth (60 GHz) of electrical transmission loss, wide electrical-to-optical bandwidth (45 GHz), and low 20-dB static driving voltage (V20dB, 1.65 V) with extremely small polarization dependency. This new structure can not only achieve excellent figures-of-merit but release the burden imposed on downscaling the core width or length of high-speed/low driving-voltage EAM without using epitaxial regrowth or ion-implantation techniques to isolate the active and passive regions.
KW - Electroabsorption modulators (EAMs)
KW - Multiple quantum-well (MQW)
KW - Optical communication
UR - http://www.scopus.com/inward/record.url?scp=33947617863&partnerID=8YFLogxK
U2 - 10.1109/LPT.2007.891637
DO - 10.1109/LPT.2007.891637
M3 - 期刊論文
AN - SCOPUS:33947617863
SN - 1041-1135
VL - 19
SP - 345
EP - 347
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 5
ER -