## 摘要

This paper uses the C++ to develop an adapted band matrix solver to simulate the i-v curve and the drain current of the 2-D double-gate n-channel MOSFET, including different doping concentrations which from 5×10 (cm ^{-3}) to 5×10 (cm^{-3}) and channel thickness which from 5 nm to 15 nm. And it discusses the threshold voltage from the i-v_{g} curve and selects the more appropriate doping concentration and channel thickness to complete the following experiments. And then it simulates if-vg curve to determine threshold voltage which can present the channel on-off situation and calculates drain current which is in different gate voltage. It also can simulate the electric potential of the x-axis and y-axis. In the figure of the electric potential we can obtain the depletion width. It also analyzes the subthreshold, the linear and the saturation region in i-v curve, and we can find out the values of sub-threshold swing in the subthreshold region of the i-v curve and the value of the drain current in the saturation region of the i-v curve. It compares the results with the other reference papers. Finally, the equations of the threshold voltage can be developed, and we calculate the threshold voltage of double-gate n-channel MOSFET. The result obtained by the equation of the threshold voltage will be compared with result by 2-D simulation. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the figure of the x-axis and y-axis electric potential from 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Pois-son's equation. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100kΩ resistor will be used to simulate the v _{o}-v_{i} characteristics and analyzes the parameters of the inverter (e.g. V_{Oh}, V_{Ol}, V_{ih}, V_{il}, V_{S}), and the noise margin (e.g. NM_{L}, NM_{H}) will be calculated in order to determine the inverter's performance and quality.

原文 | ???core.languages.en_GB??? |
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主出版物標題 | Proceedings - RSM 2013 |

主出版物子標題 | 2013 IEEE Regional Symposium on Micro and Nano Electronics |

頁面 | 410-413 |

頁數 | 4 |

DOIs | |

出版狀態 | 已出版 - 2013 |

事件 | 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi, Malaysia 持續時間: 25 9月 2013 → 27 9月 2013 |

### 出版系列

名字 | Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics |
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### ???event.eventtypes.event.conference???

???event.eventtypes.event.conference??? | 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 |
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國家/地區 | Malaysia |

城市 | Langkawi |

期間 | 25/09/13 → 27/09/13 |