@inproceedings{6eb8aad7a2324dd18aa9083bf0dbff4d,
title = "Doping profile control of epitaxial-like Si emitting layer for the application of c-Si solar cells",
abstract = "The formation of p-n junctions is a crucial step in the fabrication of photovoltaic devices. Standard processes such as high temperature (> 800 °C) diffusion cannot provide the shallow doped layers, with abrupt interfaces. In this study, the epitaxial-like boron-doped silicon (epi-Si) thin films as emitters of c-Si solar cells with structure of ITO/epi-Si(p+)/c-Si(n) are investigated under the modulation of deposited parameters, such as gas ratio, and working pressure. Applying the epi-Si:H (p+) shallow junction with abrupt interface leads to improve the short curent density (Jsc) of the planar c-Si solar cell is higher than 36 mA/cm2, and efficiency reaches above 15%.",
author = "Lee, {Chien Chieh} and Hsieh, {Yu Lin} and Li, {Tomi T.} and Chang, {Jenq Yang}",
note = "Publisher Copyright: {\textcopyright} 2016 FTFMD.; 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",
year = "2016",
month = aug,
day = "15",
doi = "10.1109/AM-FPD.2016.7543674",
language = "???core.languages.en_GB???",
series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "225--227",
booktitle = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices",
}
