Disturbance fault testing on various NAND flash memories

Chih Sheng Hou, Jin Fu Li

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. In this paper, therefore, test algorithms for covering the disturbance faults in various types of NAND flash memories are developed.

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主出版物標題Proceedings - 2012 17th IEEE European Test Symposium, ETS 2012
DOIs
出版狀態已出版 - 2012
事件2012 17th IEEE European Test Symposium, ETS 2012 - Annecy, France
持續時間: 28 5月 20121 6月 2012

出版系列

名字Proceedings - 2012 17th IEEE European Test Symposium, ETS 2012

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???event.eventtypes.event.conference???2012 17th IEEE European Test Symposium, ETS 2012
國家/地區France
城市Annecy
期間28/05/121/06/12

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