Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition

Ching Yuan Su, Ang Yu Lu, Chih Yu Wu, Yi Te Li, Keng Ku Liu, Wenjing Zhang, Shi Yen Lin, Zheng Yu Juang, Yuan Liang Zhong, Fu Rong Chen, Lain Jong Li

研究成果: 雜誌貢獻期刊論文同行評審

267 引文 斯高帕斯(Scopus)

摘要

Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO2 is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chemical vapor deposition process the carbon species dissociated on Cu surfaces not only result in graphene layers on top of the catalytic Cu thin films but also diffuse through Cu grain boundaries to the interface between Cu and underlying dielectrics. Optimization of the process parameters leads to a continuous and large-area graphene thin layers directly formed on top of the dielectrics. The bottom-gated transistor characteristics for the graphene films have shown quite comparable carrier mobility compared to the top-layer graphene. The proposed method allows us to achieve wafer-sized graphene on versatile insulating substrates without the need of graphene transfer.

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頁(從 - 到)3612-3616
頁數5
期刊Nano Letters
11
發行號9
DOIs
出版狀態已出版 - 14 9月 2011

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